| 摘要 |
A plasma etch process for etching BPSG employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber, which includes a fluorine scavenger in the form of silicon. The two primary etchant gases are CHF<SUB>3 </SUB>and CH<SUB>2</SUB>F<SUB>2</SUB>, delivered at flow rates on the order of between about 10 and 40 sccm for CHF<SUB>3 </SUB>and between about 10 and 40 sccm for CH<SUB>2</SUB>F<SUB>2</SUB>. Small quantities, on the order of 10 sccm or less, of other gases such as C<SUB>2</SUB>HF<SUB>5 </SUB>and CF<SUB>4 </SUB>may be added.
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