SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to improve contact resistance between a storage node electrode and a storage node contact plug due to a conductive pattern by protecting the storage node contact plug and the conductive pattern upon etching a mold layer with a bit line spacer and a separation layer. A semiconductor structure has a contact pad(132). A composite layer is formed on the semiconductor structure and includes a first interlayer dielectric(124), an isolation layer(146), and a second interlayer dielectric(134) having a contact hole. The contact hole exposes the contact pad. A spacer(152) is formed on an inner wall of the contact hole. A contact plug(154) is formed on the contact pad in the contact hole. The contact plug has an upper surface lower than an upper surface of the composite layer. Conductive pads are formed on sidewalls of the contact plug and an upper portion of the spacer in the contact hole. A storage node electrode(172) is formed on the conductive pad.