METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR

摘要

A method for manufacturing an organic TFT is provided to reduce remarkably a leakage current and to prevent the crosstalk between adjacent organic TFTs. A gate electrode(20) is formed on a substrate(10). A gate insulating layer(30) is formed on the resultant structure to cover the gate electrode. A source electrode(40) and a drain electrode(50) are formed on the gate insulating layer. An organic semiconductor layer(60) is formed on the resultant structure to enclose the source and drain electrodes. An exposure process is performed on the organic semiconductor layer through the substrate. A transparent substrate is used as the substrate.