NON-VOLATILE MEMORY DEVICES AND METHODS OF FORMING THE SAME

摘要

A nonvolatile memory device and its forming method are provided to minimize the distance between adjacent nonvolatile memory cells by isolating electrically first and second active regions from each other using a cell isolation pattern. A cell isolation pattern(105a) and a semiconductor pattern(110a) are sequentially stacked on a predetermined region of a semiconductor substrate(100). A cell gate line(165a) is formed at one side of the semiconductor pattern and the cell isolation pattern on the substrate. A multilayer trap insulating layer(160) is interposed between the cell gate line and the substrate and between the cell gate line and the semiconductor pattern. A first doped layer is formed at both sides of the cell gate line in the substrate. A second doped layer is formed at both sides of the cell gate line in the substrate.