METHOD OF FORMING A THIN FILM

摘要

A method for forming a thin film is provided to uniformly supply reaction gas to the center of a semiconductor substrate due to a pumping process by injecting a reaction material into a process chamber having loaded semiconductor substrates and by purging the process byproducts in the process chamber and performing a pumping process. A reaction material is injected to the upper surface of a substrate loaded into a reaction chamber to chemically absorb the reaction material to the substrate. Purge gas is supplied to the substrate to eliminate the reaction material physically absorbed to the upper surface of the chemical absorbed reaction material. A pumping process is performed on the reaction chamber to eliminate the physically absorbed reaction material remaining in the reaction chamber and the purge gas. The pressure of the process chamber in the pumping process is lower than that of the process chamber in the chemical absorption process.