Bottom gate-type thin-film transistor and method for manufacturing the same

摘要

In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper ( 55 ) is removed. The ion stopper ( 55 ) does not remain in the interlayer insulating film ( 8 ) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper ( 55 ), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer ( 4 ). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer 4 is 10¹⁸ atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.