| 摘要 |
A method for manufacturing a transistor is provided to obtain uniform doping profile and to reduce electric field generated at a protrudent channel top corner by performing two-step ion implantation processes using different doping technique. A semiconductor substrate(1) having a field oxide layer(4) for defining an active region is prepared. By etching the field oxide layer, a channel region of the active region is protruded. Two-step ion-implantation processes for controlling threshold voltage are sequentially performed to the protruded channel region. First ion-implantation is carried out using a plasma doping technique, and second ion-implantation is performed using a beam line technique. A gate is then formed to surround the protruded channel region.
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