Method for manufacturing semiconductor integrated circuit structures

摘要

A method for manufacturing circuit structures integrated in a semiconductor substrate that includes regions, in particular isolation regions, includes the steps of:-depositing a conductive layer to be patterned onto the semiconductor substrate;-forming a first mask of a first material on the conductive layer;-forming a second mask made of a second material that is different from the first and provided with first openings of a first size having spacers formed on their sidewalls to uncover portions of the first mask having a second width which is smaller than the first;-partly etching away the conductive layer through the first and second masks such to leave grooves of the second width;-removing the second mask and the spacers; and-etching the grooves through the first mask to uncover the regions provided in the substrate and form conductive lines.