| 摘要 |
<p>A nonvolatile memory device and its forming method are provided to enhance the degree of integration and to improve the reliability. An isolation layer for defining an active region is formed on a substrate(100). A memory layer(114L,114R) is composed of a tunnel dielectric(111L,111R), a charge storing layer(112L,112R) and a blocking dielectric(113L,113R). The memory layer is selectively removed therefrom. A center gate(127) and a gate insulating layer for enclosing both sidewalls and a lower surface of the center gate are formed on the memory layer removed portion of the resultant structure. A lateral gate(118L,118R) is formed at both sides of the center gate via a gate insulating layer. First and second memory cells(120L,120R) are formed on the resultant structure by patterning the memory layer using the lateral gate as an etch mask. First and second doped region(105L,105R) are selectively formed on the resultant structure by an ion implantation.</p> |
