GATE STRUCTURE, SONOS NON-VOLATILE MEMORY DEVICE HAVING THE GATE STRUCTURE AND METHOD OF MANUFACTURING THE SONOS NON-VOLATILE MEMORY DEVICE

摘要

A gate structure, an SONOS type nonvolatile memory device with the same and a manufacturing method thereof are provided to perform stably an erase operation by restraining electrons from penetrating into a charge trapping dielectric using an improved single electrode. A gate structure includes a charge trapping dielectric and a single electrode. The charge trapping dielectric(16) is formed like a multilayer structure composed of a first silicon oxide layer(10), a silicon nitride layer(12) and a second silicon oxide layer(14). The single electrode(18) is formed on the charge trapping dielectric. The single electrode is made of a semiconductor material doped with boron. The semiconductor material of the single electrode contains a predetermined mixture of silicon and germanium.