Biased H2 etch process in deposition-etch-deposition gap fill
摘要
Biased plasma etch processes incorporating H<SUB>2 </SUB>etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.
