III-NITRIDE SEMICONDUCTOR ON SILICON RELATED SUBSTRATE AND ITS OPTO-DEVICES, FABRICATION METHOD THEREOF

摘要

A silicon-based III-nitride light emitting device and its manufacturing method are provided to improve quality of a gallium nitride crystal by patterning a silicon thin film and growing the gallium nitride crystal. A silicon thin film is stacked on an upper portion of an SOI(Silicon On Insulation) substrate(6). The silicon thin film is patterned. A photoresist is coated on the silicon thin film. A photoresist pattern(10) is formed through an exposing process. A silicon thin film part where a mask photoresist do not remain is etched to form a silicon thin film pattern(11). The mask photoresist layer is removed. A gallium nitride crystal is grown on an upper portion of the patterned silicon thin film.