THE TAN FILMS DEPOSITED BY TWO-STEP ALD

摘要

A method for depositing a TaN film using two ALD(Atomic Layer Deposition) processes is provided to suppress generation of Ta3N5 and form a cubic TaN layer having low resistivity by performing the ALD process including a Ta deposition process and a nitration process. A first ALD process is performed to form a Ta unit element as an atomic layer by using an inorganic compound precursor including Ta and reaction gas. A second ALD process is performed to form a TaN atomic layer by implanting an N source and nitrating the N source.