发明名称 |
Multi-level nonvolatile semiconductor memory device utilizing a nonvolatile semiconductor memory device for storing binary data |
摘要 |
A multi-level semiconductor memory device for storing multi-level data having three or more values is implemented by utilizing a nonvolatile memory device for storing 2-valued data. Identification of successive 16-bit data externally applied is performed with external address bit AA [ 2 ], and a storage block is selected with external address bit AA [ 23 ]. Upper word data LW and lower word data UW are compressed into byte data of 8 bits, respectively, and stored in a memory cell array.
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申请公布号 |
US7164601(B2) |
申请公布日期 |
2007.01.16 |
申请号 |
US20040936615 |
申请日期 |
2004.09.09 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
MITANI HIDENORI;YAMAUCHI TADAAKI;OGURA TAKU |
分类号 |
G11C16/00;G11C16/02;G11C11/56;G11C16/04;G11C16/06;G11C16/08 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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地址 |
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