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发明名称
METHODS OF FORMING A TRANSISTOR WITH AN INTEGRATED METAL SILICIDE GATE ELECTRODE
摘要
申请公布号
KR100669627(B1)
申请公布日期
2007.01.16
申请号
KR20067003171
申请日期
2006.02.15
申请人
发明人
分类号
H01L21/336;H01L21/28
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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