| 摘要 |
A method for manufacturing a MOSFET device is provided to reduce junction leakage current and to increase data retention time by changing an amorphous silicon layer to a single crystalline silicon layer using SPE(Solid Phase Epitaxy). A substrate(10) having an isolation layer(20) for defining an active region is prepared. A channel ion-implantation process is performed in the active region, and then a gate(30) is formed on the substrate. A spacer(40) is formed at both sidewalls of the gate. A groove is formed by isotropic-etching the substrate of both sides of the gate using the spacer as a mask. An amorphous silicon layer is filled in the groove. A single crystalline silicon layer(70) is formed by crystallizing the amorphous silicon layer using SPE. A source/drain region(S/D) is formed in the single crystalline silicon layer.
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