发明名称 UNIJUNCTION STRAIN-SENSING TRANSISTOR
摘要 The proposed unijunction strain-sensing transistor contains a semiconductor substrate with two ohmic contacts and an emitter p-n junction. The contacts are arranged at the opposite surfaces of the substrate.
申请公布号 UA19977(U) 申请公布日期 2007.01.15
申请号 UA20060005556 申请日期 2006.05.22
申请人 O.S. POPOV ODESA NATIONAL ACADEMY OF COMMUNICATION 发明人 VIKULIN IVAN MYKHAILOVYCH;KURMASHEV SHAMIL DZHAMASHEVYCH;MINHALOV VOLODYMYR OLEKSANDROVYCH;NYKYFOROV STANISLAV MYKOLAIOVYCH
分类号 H01L29/00 主分类号 H01L29/00
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