PROCESS FOR PREPARATION OF GALLIUM BASE METAL OF SILICON

摘要

The invention relates to processes for preparation of gallium base metal of silicon, which can be used in producing silicon of monocrystal with specified electrophysical properties. A process comprises melting in crucible of charge in the form of silicon pieces with applied layer of gallium. After melting charge inert gas pressure is reduced to a value being determined of condition of 1.7PGa>PI =PGa, where PI û inert gas pressure, PGa ûgallium vapour elasticity pressure at the temperature of melt. Such carrying out process allows to reduce gallium dispersion in the obtained base metal.