| 摘要 |
A method for cleaning a multilayer substrate with a cleaning liquid capable of etching a protective film formed on the surface of an SiGe layer which is the outermost layer of the multilayer substrate in such a way that the protective film is left. A method for bonding a multilayer substrate cleaned by the above method in sucha way that the outermost layer of the multilayer substrate is bonded to the surface of another substrate. A bonded wafer manufacturing method in which an Si1-xGex layer and a protective layer are sequentially formed on an Si single- crystal bonded wafer, ions are implanted through the protective film to form an ion-implanted layer, the bonded wafer is cleaned, the surface of the protective layer is brought into close contact with a base wafer, separation is carried out at the ion-implanted layer, a thermal oxide layer is formed on the surface of a separation layer transferred to the base wafer by the separation, the thermal oxide layer is removed to expose a concentration SiGe layer, and an Si single-crystal layer is epitaxially grown on the surface of the concentration SiGe layer. With these, a cleaning method not roughening the surface of the SiGe layer which is the outermost layer of a multilayer substrate, a bonding method, and a bonded wafer manufacturing method by which defective bonding attributed to ion implantation can be prevented are provided. ® KIPO & WIPO 2007
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