METHOD AND A SYSTEM FOR SEALING AN EPITAXIAL SILICON LAYER ON A SUBSTRATE

摘要

A method and a system for sealing an epitaxial silicon layer on a substrate is provided to improve purity of an oxide layer by exposing the epitaxial silicon layer to ozone gas to form a pure oxide layer. An epitaxial silicon layer(104) is formed on a substrate(102). A protective oxide layer is directly grown on the epitaxial silicon layer. The protective oxide layer is grown by using ozone gas in a loadlock chamber. During the protective oxide layer is grown by using the ozone gas in the loadlock chamber, pressure in the loadlock chamber is maintained at a value less than that of a transfer chamber. After forming of the protective oxide layer, the ozone gas in the loadlock chamber is purged.