An imaging device and its manufacturing method are provided to improve optical sensitivity by using a light opening unit pattern for collecting a light before being incident into a photo diode. Semiconductor devices including an optical device is formed on a substrate(100). A lower dielectric(130) is formed on the substrate and has an optical path groove(255) on an upper portion of the optical device. The optical path groove has a lower surface whose shape is convex upwardly to increase optical sensitivity of the optical device. An interlayer dielectric structure is formed on the lower dielectric to be extended to the lower optical path groove. A light opening unit(254) is formed on the interlayer dielectric structure. A light opening unit pattern(256) is formed to gap-fill the optical path groove and the light opening unit. A micro lens(310) is located on an upper portion of the light opening unit on the interlayer dielectric structure.
申请公布号
KR100667650(B1)
申请公布日期
2007.01.12
申请号
KR20050108440
申请日期
2005.11.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, DAE KEUN;OH, HYEOK SANG;CHUNG, JU HYUCK;YU, MOON JAE