| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflective photomask blank 10 including a substrate 1, a multilayer reflective film 2 provided on the substrate 1, and light absorbing layers 4 and 5 provided on the film 2, wherein the layers 4 and 5 consist of a plurality of tantalum-containing layers and the content of tantalum in a layer closer to the film 2 is higher than that of the layer formed by laminating thereafter, and wherein the reflective photomask blank can obtain a good contrast for a reflection region in exposure by EUV light and inspection by DUV light and is free from an increase in charge due to pattern exposure by an electron beam, a reflective photomask using the blank, and a pattern transfer method using the photomask blank. <P>SOLUTION: The reflective photomask blank is obtained by laminating a layer 6 mainly containing metal other than tantalum on a plurality of layers 4 and 5 containing tantalum. In addition, the pattern transfer method using the reflective photomask blank is also disclosed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
