| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide technology capable of reducing the parasitic capacity of a capacitive element while reducing the occupied area of a capacitive element. <P>SOLUTION: The capacitive element comprising an intermediate electrode 11, a capacitive insulating film 21, and an upper electrode 12 is formed on a capacitive element comprising a lower electrode 10, a capacitive insulating film 18, and the intermediate electrode 11. Namely the capacitive elements are formed as lamination structure. A level difference is formed on the intermediate element 11, so that a difference between the intermediate electrode 11 and the lower electrode 10, and a distance between the intermediate electrode 11 and the upper electrode 12 in an area other than a capacitance formation area, are longer than that in the capacitance formation area. For instance, the lower electrode 10 and the capacitive insulating film 18 directly come into contact with each other in the capacitance formation area, and in the area other than the capacitance formation area, the lower electrode 10 and the capacitive insulating film 18 do not come into contact with each other. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
