发明名称 |
Electron-beam treated CDO films |
摘要 |
A method of forming an integrated circuit including forming a dielectric film is described. The forming of the dielectric film includes: providing a substrate, providing a carbon doped oxide film on the substrate, and treating the carbon doped oxide film with an electron beam. The carbon doped oxide film can be provided by chemical vapor deposition.
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申请公布号 |
US2007009717(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20040802991 |
申请日期 |
2004.03.16 |
申请人 |
INTEL CORPORATION, A DELAWARE CORPORATION |
发明人 |
WONG LAWRENCE D. |
分类号 |
B05D3/00;B05D5/12;B32B3/00;C23C16/00;C23C26/00;H01L21/316;H01L21/768 |
主分类号 |
B05D3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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