SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device comprising a lower wiring layer (first metal layer) (16) formed on a semiconductor substrate, an interlayer insulating film (22) formed on the lower wiring layer (16), a plug metal (26) which is formed in a contact hole (opening) formed in the interlayer insulating film (22) in contact with the lower wiring layer (foundation layer) (16) and connected with the lower wiring layer (16), and a first barrier layer (24) formed between the plug metal (26) and the interlayer insulating film (22) and having a chemical composition different from that of the lower wiring layer (foundation layer). Also disclosed is a method for manufacturing such a semiconductor device. In this semiconductor device, the contact resistance between the plug metal (26) and the lower wiring layer (16) can be reduced.