| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase change memory device with an improved core structure. <P>SOLUTION: The phase change memory device is provided with a memory cell block, a plurality of global bit lines, and bit line selection circuits connecting alternately a plurality of local bit lines to corresponding global bit lines out of the plurality of global bit lines at the upper end and the lower end of the memory cell block. Directions of current flowing through adjacent local bit lines out of the local bit lines are opposite to each other. The phase change memory device is provided further with a plurality of discharge circuits discharging voltage of the local bit lines, and the discharge circuit is connected alternately to a corresponding local bit line at the upper end and the lower end of the memory cell block. Thereby, the bit line selection circuit and the bit line discharge circuit can be easily arranged even when size of the memory cell is made small. <P>COPYRIGHT: (C)2007,JPO&INPIT |
