| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor chip 1 having a capacitor C that is superior in the electrical characteristics. <P>SOLUTION: In the semiconductor chip 1, a stress relaxation layer 30 is formed on a surface of the semiconductor chip 1 where an electronic circuit is formed and rearrangement wiring of a connection terminal of the electronic circuit is formed on a surface of the stress relaxation layer 30. The stress relaxation layer 30 formed of a dielectric material is disposed between a first electrode 10 formed on the rear face of the stress relax layer 30 and a second electrode 20 formed on the surface of the stress relaxation layer 30, and the capacitor C is formed in the chip. The inner face of the first electrode 10 and/or the second electrode 20 is made into a concave-convex face. <P>COPYRIGHT: (C)2007,JPO&INPIT |
