| 摘要 |
An embodiment of the present invention provides an apparatus capable of a high fundamental acoustic resonance frequency, comprising a substrate, a bottom electrode layer adjacent the substrate, a voltage tunable dielectric layer adjacent the bottom electrode layer, the voltage tunable dielectric layer including an active region, a top electrode adjacent the voltage tunable dielectric layer, a final interconnect layer connected to the top electrode via an interlayer, and wherein the top and bottom electrodes are at a predetermined thickness such that a desired high fundamental acoustic resonance is obtained. The active region of the voltage tunable dielectric layer may be approximately the length of the top electrode and the interlayer and the final interconnect layer may cover only a small fraction of the active region of the voltage tunable dielectric layer, thereby reducing the amplitude of resonances due to the interlayer or final interconnect layer.
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