VAPORIZABLE METALORGANIC COMPOUNDS FOR DEPOSITION OF METALS AND METAL-CONTAINING THIN FILMS

摘要

A new class of metalorganic vaporizable compounds with mixed ligands is described herein, along with their use for the deposition of thin films of metals and metal- containing oxides, nitrides, oxynitrides, silicates, suicides, metal containing materials, and combinations thereof. . The metalorganic vaporizable compounds comprise amides in combination with malonates and guanidinates as donor-functionalized bidentate chelating ligands. The use of a metalorganic vaporizable compounds with mixed ligands to deposit and modify thin films of Hf, Zr, Ti, Ta, Al, Sn, Zn, Ca, Mg, Ga, In, Tl, Sc, Bi, Rh, Ir, La, Pr, Eu, Gd, Ba, Sr, and other lanthanide metal oxides, nitrides, oxynitrides, silicates, suicides, and composites, and further use of metalorganic vaporizable compounds with mixed ligands to deposit thin films of Ru, Cu, Co, Ag, Au, Pd, Pt, Ni, Fe, Mn, Cr, V, Nb, Pb, W, Si, Ge and Mo metals, metal oxides, nitrides, oxynitrides, silicates, suicides and combinations thereof are also described herein. A process for the preparation of metalorganic vaporizable compounds comprising amides in combination with donor-functionalized bidentate chelating ligands as a mixed ligand system is described herein. In addition, the use of metalorganic vaporizable compounds in various vapor phase deposition processes such as metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) of metals and metal-containing oxide thin films is described herein.