| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a static type semiconductor memory device in which write-in/read-out of data can be performed stably even under low power supply voltage. <P>SOLUTION: Cell power supply lines (PVL0-PVLn) are arranged for each memory cell column, impedance or a voltage level of the cell power supply lines is adjusted according to a voltage level of bit lines (BL0, /BL0-BLn, /BLn) of a bit line of a corresponding column. In writing data, the cell power supply line is floated according to a bit line potential of a selected column, its voltage level is changed, latch capability of a selected memory cell is reduced, and data is written at high speed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
