| 摘要 |
PROBLEM TO BE SOLVED: To improve dielectric breakdown strength (reliability) of a copper wiring formed by means of a damascene method. SOLUTION: Cu wirings 46a to 46e to be buried in wiring grooves 40 of silicon oxide film 39, are formed by means of polishing using CMP. Then, after being subjected to a cleaning step after CMP, the surfaces of the silicon oxide film 39 and Cu wirings 46a to 46e are treated with reducing plasma (ammonia plasma). Thereafter, without breaking a vacuum, a cap film (silicon nitride film 47) is formed continuously. COPYRIGHT: (C)2007,JPO&INPIT
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