发明名称 |
SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR-ON-INSULATOR (SOI) CONFIGURATION AND INCLUDING A SUPERLATTICE ON A THIN SEMICONDUCTOR LAYER AND ASSOCIATED METHODS |
摘要 |
<p>A semiconductor device may include a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer on a side thereof opposite the substrate. The semiconductor device may further include a superlattice on the semiconductor layer on a side thereof opposite the insulating layer. The superlattice may include a plurality of stacked groups of layers, with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.</p> |
申请公布号 |
WO2007005862(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
WO2006US26029 |
申请日期 |
2006.06.30 |
申请人 |
RJ MEARS, LLC;RAO, KALIPATNAM VIVEK |
发明人 |
RAO, KALIPATNAM VIVEK |
分类号 |
H01L29/15;H01L29/04;H01L29/10;H01L29/786 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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