| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which prevents short-circuiting accidents, even when positional deviations are generated in a mask on a wiring embedded in an insulating layer. SOLUTION: A first insulating layer 12 is formed on the surface of an underlying layer 11, and a plurality of wirings 13, 14 are formed on the surface of the first insulating layer. Then a second insulating layer 15 is formed so that the wirings 13, 14 are embedded, and thereafter, the second insulating layer 15 is removed so that the upper surfaces of the wirings 13, 14 are exposed, and the side surfaces of the wirings 13, 14 are covered as a remaining insulating layer 16. A third insulating layer 17 is formed so that the plurality of wirings 13, 14 and the remaining insulating layer 16 are embedded, and thereafter, through-holes 18, 19 reaching at least the upper surfaces of the plurality of wirings 13, 14 are formed on the third insulating layer 17. COPYRIGHT: (C)2007,JPO&INPIT
|
