| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which realizes both a high-performance transistor in the low-voltage circuit range and a high breakdown voltage transistor in the high-voltage circuit range. SOLUTION: The memory comprises a cell array region composed of arrayed memory cell transistors, having control gate electrodes 74 having a metal silicide film 53, inter-gate insulating film 25 beneath the control gate electrodes 74, floating gate electrodes 73 below the inter-gate insulation film 25 and a tunnel insulation film 20 below the floating gate electrodes 73, a high voltage circuit region, disposed around the cell array region, including high-voltage transistors having a first gate insulating film 21 thicker than that of the tunnel insulating film 20, and a low-voltage circuit region, disposed at a position different from the high-voltage circuit region around the cell array region, including low-voltage transistors having a second gate insulation film 22 thinner than that of the first gate insulation film 21. COPYRIGHT: (C)2007,JPO&INPIT
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