| 摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of copper ions from a copper interconnection line in an initial stage of the film formation of a low dielectric-constant interlayer insulation film having a capability of preventing the diffusion of copper ions. SOLUTION: In manufacturing the semiconductor device, a layer (4a) containing nitrogen is formed in an exposed portion of the copper interconnection line (3b) formed in an insulation film (1) on a substrate. Thereafter, with an organic silicon compound having a siloxane bond (Si-O-Si) as a material, the interlayer insulation film (5) is formed by plasma CVD on the layer (4a) containing nitrogen. COPYRIGHT: (C)2007,JPO&INPIT
|
