| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation circuit for a semiconductor device capable of measuring precisely a drain current and a gate source/drain capacity sum, in the same measuring object. SOLUTION: A selector circuit 51 determines the first/second selection condition under control of a control signal S50, and selects one out of an S-pad 35 and a node N1 to be connected electrically to a source terminal NS of a measuring objective NMOS transistor MT. A selector circuit 52 determines the first/second selection condition under the control of the control signal S50, and selects one out of a D-pad 31 and the node N1 to be connected electrically to a drain terminal ND of the measuring objective NMOS transistor MT. A selector circuit 53 determines the first/second selection condition under the control of the control signal S50, and selects one out of a B-pad 39 and a node N2 to be connected electrically to a backgate terminal NB of the measuring objective NMOS transistor MT. COPYRIGHT: (C)2007,JPO&INPIT
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