Phase change memory with adjustable resistance ratio and fabricating method thereof

摘要

A phase change memory with adjustable resistance ratio is disclosed, which includes a phase change layer and an interfacial layer formed to be in contact with each other, and at least two electrodes in contact with the phase change layer and the interfacial layer respectively. The contact sections between the two electrodes and the phase change layer and the interfacial layer define a contact area respectively, wherein, the area defined by the contact section between the electrode and the phase change layer is larger than the area defined by the contact section between the electrode and the interfacial layer.