发明名称 |
METHOD OF FORMING NITRIDE FILMS WITH HIGH COMPRESSIVE STRESS FOR IMPROVED PFET DEVICE PERFORMANCE |
摘要 |
A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 Å.
|
申请公布号 |
US2007007548(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20050160705 |
申请日期 |
2005.07.06 |
申请人 |
NOVELLUS SYSTEMS INC. |
发明人 |
CONTI RICHARD A.;BOURQUE RONALD P.;KLYMKO NANCY R.;MADAN ANITA;SMITS MICHAEL C.;TILGHMAN ROY H.;WONG KWONG H.;YANG DAEWON |
分类号 |
H01L21/8234;H01L21/31;H01L27/10 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|