发明名称 |
Polycrystalline SiGe junctions for advanced devices |
摘要 |
A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.
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申请公布号 |
US2007010076(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20060522623 |
申请日期 |
2006.09.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;MILLER ROBER J.;JONES ERIN C.;AJMERA ATUL |
分类号 |
H01L21/20;H01L21/225;C23C16/24;C30B1/00;H01L21/205;H01L21/316;H01L21/331;H01L21/336;H01L21/36;H01L21/8222;H01L29/08;H01L29/165;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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