| 摘要 |
<p>The present memory device (130) includes first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138) and an active layer (136) between the first and second electrodes (132, 138), the active layer (136) being of a material containing randomly oriented pores which are interconnected to form passages through the active layer (136).</p> |
| 申请人 |
SPANSION LLC;SOKOLIK, IGOR;KINGSBOROUGH, RICHARD;GAUN, DAVID;KAZA, SWAROOP;SPITZER, STUART;PANGRLE, SUZETTE, K. |
发明人 |
SOKOLIK, IGOR;KINGSBOROUGH, RICHARD;GAUN, DAVID;KAZA, SWAROOP;SPITZER, STUART;PANGRLE, SUZETTE, K. |
