SOURCE SIDE INJECTION STORAGE DEVICE AND METHOD THEREFOR
摘要
<p>A memory charge storage device has regions of sacrificial material overlying a substrate (12). For each memory cell a first doped region (20) and a second doped region (24) are formed within the substrate and on opposite sides of one (16) of the regions of sacrificial material. A discrete charge storage layer (28) overlies the substrate and is between the regions of sacrificial material. In one form a control electrode (34) is formed per memory cell overlying the substrate with an underlying substrate diffusion and laterally adjacent one of the regions of sacrificial material. A third substrate diffusion (60) is positioned between the two control electrodes. In another form two control electrodes are formed per memory cell with a substrate diffusion underlying each control electrode. In both forms a select electrode (64) overlies and is between both of the two control electrodes.</p>
申请公布号
WO2007005190(A2)
申请公布日期
2007.01.11
申请号
WO2006US22279
申请日期
2006.06.08
申请人
FREESCALE SEMICONDUCTOR;CHINDALORE, GOWRISHANKAR, L.