SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

摘要

A protective film (56) having a water/hydrogen shielding function is formed so as to cover the periphery of a pad electrode (54a) in such a state that is electrically insulated from the pad electrode. A highly moisture resistant electrically conductive material, which has a significantly higher water/hydrogen shielding function than insulating materials, specifically palladium (Pd) or a palladium-containing material, iridium (Ir) or iridium oxide (IrO_x wherein x is typically 2) or an iridium- or iridium oxide-containing material is used as the material for the protective film. A highly reliable FeRAM can be realized which can surely prevent the internal entry of water/hydrogen in a relatively simple construction, and can maintain high performance of a ferroelectric capacitor structure (30).