| 摘要 |
A method for forming a non-salicide of a semiconductor device is provided to reduce fabricating cost of a wafer by eliminating deposition, photolithography and etch processes for a salicide blocking oxide layer. After a gate oxide layer(33) and a gate electrode(35) are sequentially formed on a silicon substrate(31) divided into first and second regions, an LDD(lightly doped drain) spacer(37) is formed on the lateral surface of the resultant structure. A salicide blocking resist pattern(39) is formed in the first region. A salicidation process and an O2 ashing process are performed on the first region to form an oxide layer on the salicide blocking resist pattern. A salicidation process using an oven or a hot plate is selectively performed on the second region at a temperature of 50~250 deg.C to form a salicide layer on the silicon substrate in the second region and the exposed part of the gate electrode. The oxide layer and the salicide blocking resist pattern in the first region are eliminated.
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