| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, a method of manufacturing the same, and a design method of the semiconductor device that facilitate designing and reduce the size and cost of the semiconductor device, including n-type and p-type wells, to which different biases are applied. <P>SOLUTION: The semiconductor device is provided with a semiconductor substrate 10 of a first conductive type, a first well 32a of the first conductive type in the semiconductor substrate, a second well 32b of a second conductive type in the semiconductor substrate, and an impurity layer 14 of second conductive type. The impurity layer 14 is embedded under the first well and the second well in the semiconductor substrate and connected to the second well to apply a bias voltage to the second well. The impurity layer includes a contact region 34 of a first conductive type, such that the contact region 34 is selectively formed immediately below the first well, and the first well 32a is connected to the semiconductor substrate via a contact region. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
