| 摘要 |
A silicon alloy, particularly for use in a crystal detector, is formed by adding from .003 to .01 per cent of boron to silicon of a purity in excess of 99.8 per cent. This results in a considerable reduction in the specific resistance and an improvement in the rectifying properties. In making the alloy, an ingot of the pure silicon is prepared and its specific resistance is measured. The proportion of boron to be added to give a desired resistance is then calculated. A master alloy is then prepared comprising 1 per cent of boron, and the final alloy is prepared by mixing the correct proportion of the master alloy with the pure silicon. From the ingot thin slabs are cut to form detector units. |
