发明名称 Giant magnetoresistance sensor with side longitudinal bias stacks and method for forming same
摘要 A giant magnetoresistance (GMR) sensor with side longitudinal bias (LB) stacks is proposed for magnetic recording at ultrahigh densities. The GMR sensor extends from a read region into two side regions. The side LB stacks overlies the GMR sensor in the two side regions, rigidly pinning sense layers through antiparallel coupling across an antiparallel coupling spacer layer. Magnetostatic interactions occur in the sense layers between the read and side regions, thereby stabilizing the sense layers in the read region.
申请公布号 US2007008762(A1) 申请公布日期 2007.01.11
申请号 US20050179084 申请日期 2005.07.11
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES 发明人 LIN TSANN
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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