SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor device includes MOS transistors formed by doping a p-type substrate (4) with an impurity from its surface of. The semiconductor device comprises first and second MOS devices (1A, 1B) each having the p-type substrate (4) having the region directly below a gate layer (5) not doped with the impurity and an n-type diffusion region formed on the surface of the p-type substrate (4) circumscribed to the gate layer (5). The gate layer of the first MOS device (1A) is connected to the n-type diffusion layer of the second MOS device (1B), and the n-type diffusion layer of the first MOS device (1A) is connected to the gate layer of the second MOS device (1B), thereby constituting a first capacitance element.