发明名称 |
MEMORY CELL WITH HIGH-K ANTIFUSE FOR REVERSE BIAS PROGRAMMING |
摘要 |
<p>An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is constructed to include a high-K dielectric material with a K greater than 3.9. Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.</p> |
申请公布号 |
WO2007005273(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
WO2006US23936 |
申请日期 |
2006.06.19 |
申请人 |
SANDISK 3D LLC;CLEEVES, JAMES, M. |
发明人 |
CLEEVES, JAMES, M. |
分类号 |
G11C17/16;G11C17/14 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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