发明名称 METHOD OF FORMATING ASSEMBLY OF ELECTRODE FOR PRODUCING PLASMA ION FOR PLASMA CLEANING OF SEMICONDUCTOR
摘要 A method for fabricating an electrode assembly for generating ions for use in a plasma etching is provided to secure strong coupling state between a ring and an electrode plate by coupling the ring and the electrode plate by means of a physical manner. A plurality of coupling grooves(21) are formed along an outer circumference of a ring(20) at regular intervals. The coupling grooves are cut to be matched to a shape of a coil(30). The coil is inserted into a cooling chamber that utilizes liquid nitrogen or helium as a coolant. The inserted coil is cooled to have an outer diameter that is not touched to an inner wall of the respective coupling grooves. The cooled coil is inserted into the coupling grooves. An electrode plate(40) provided with a through hole is coupled to the ring through a screw that is inserted into the coupling grooves.
申请公布号 KR100668034(B1) 申请公布日期 2007.01.11
申请号 KR20060066885 申请日期 2006.07.18
申请人 CS TECH CO., LTD. 发明人 KWAK, BYUNG DO
分类号 H01L21/3065 主分类号 H01L21/3065
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