| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of improving the performance of a semiconductor device, and of realizing reduction in a manufacturing process of the semiconductor device and reduction in the manufacturing cost. <P>SOLUTION: A non-electrolytic Ni plated film 1p and a non-electrolytic Au plated film 1q are successively formed simultaneously on both a first metal film 1h formed on both a main surface 1a of a semiconductor substrate 1f and a second metal film 1j, formed on a rear surface 1b, respectively, thereby enabling solder connection on both the main surface 1a and the rear surface 1b of the semiconductor substrate 1f. Thus, even a source electrode 1c on the main surface 1a side, where a large current flows, can be connected to a lead via solder, and parasitic resistance, parasitic inductance and thermal resistance can be reduced. As a result, performance of the semiconductor device 6 can be improved. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
